| 摘要 |
<p>PROBLEM TO BE SOLVED: To eliminate the generation of unevenness on the surface of a polycrystal silicon film, caused by the existence of a native oxide, and enable satisfactory formation of an element by removing a native oxide on the surface of an amorphous semiconductor film formed on a substrate, and at the same time, irradiating the surface of the semiconductor with an energy beam. SOLUTION: After a silicon oxide film as an undercoat layer 2 is formed on an insulating substrate 1, an amorphous silicon film 3 is formed on the silicon oxide film. Then, heat annealing is carried out on the amorphous silicon film, thus dehydrogenating the film. Thus, a native oxide 4 is formed on a polycrystal silicon film surface 31. Then, the natural oxide film 4 on the surface is removed by etching in a dry etching chamber, and the substrate on which etching is completed in a vacuum is transported into a laser annealing chamber, via a transfer chamber maintained in a vacuum. The amorphous silicon surface 31 is irradiated with a laser beam, thus forming a polycrystal silicon film 32 on the entire surface of the substrate.</p> |
