| 摘要 |
PURPOSE:To simplify the forming method for electrical connection contact of a semiconductor chip by using a metallic thin wire gripped by a capillary, and by forming a ball by a ball bonding method, and by forming a bumpy contact of a prescribed shape. CONSTITUTION:A metallic thin wire capable of ball bonding, for example, a gold wire 5 of 25mum in diameter is gripped by a capillary 3 made of a ceramic material or the like, and thermal fusion is used to form a ball 6 on a tip of the gold wire 5. Next, thermal welding or the like is used to fix the ball 6 on an input/output electrode pad 2 of a semiconductor chip 1, so that a bottom part 7 of a bumpy contact of about 80 to 100mum in diameter and of about 35 to 45mum in height is formed. While the gold wire 5 is coupled with the bumpy contact, it is made to pass through a hole 4 of the capillary 3. Next the capillary 3 is moved in the desired direction, that is, in a looped state, so that a bumpy contact of a desired shape can be formed in such a simple process. |
