METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method for forming a gate electrode is provided to improve a thermal stability and a low resistance property and to simplify manufacturing process by using CoSi2 as a polycide. CONSTITUTION: A gate oxide and a polysilicon gate pattern are formed on a silicon substrate. An insulating layer is deposited and flattened by CMP so as to exposed the polysilicon gate pattern. A Co metal layer is selectively formed on the flattened insulating layer and the gate pattern. A silicide layer(26) is formed at interface between the gate pattern and the Co metal layer by annealing, and non-reactive Co metal layer is removed. Gate side walls are formed at both sides of the polyside gate electrode by etch-back the remained insulating layer. Because of the unnecessary of the silicide etching step, additional oxidation process for recovering the gate oxide is not necessary.