| 摘要 |
PROBLEM TO BE SOLVED: To keep a wave length and a pulse width of variable operation of frequency in a fixed range by making variable the absorption loss an active layer of a distributed reflection region by voltage impression from the outside. SOLUTION: This mode synchronous semiconductor laser has a structure comprising at least a gain region 12, a saturable absorption region 11, and a distribution reflector 14. An absorption optical modulation region 13 is integrated in a region where optical loss of a hybrid mode synchronous operation is effected by a signal input of system frequency from the outside. An active layer 21 is formed on an n-InP substrate 10, and the active layer 21 is buried with a p-InP clad layer 22. As a result, it is made possible to change the frequency of the mode synchronous semiconductor laser, thereby it is possible to obtain the mode synchronous semiconductor laser having the frequency agreed with the clock frequency of an optical communication system.
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