| 摘要 |
A method of manufacturing mask read-only-memory. The method includes forming a plurality of first and second active regions in designated locations on a substrate. Each first and second active region has a channel region and a source/drain region on both side of the channel. Subsequently, shallow trench oxide are formed within the channel regions of the first active regions, and then source/drain terminals are formed in the respective source/drain regions of first and second active regions. Finally, a gate terminal is formed over the channel region.
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