发明名称 Pressure-contact type semiconductor element and power converter thereof
摘要 A double circular gate conductor 9 comprises a first circular gate conductor 7 connected to a gate electrode 2a, a second circular gate conductor 8, and a connecting conductor which connects the first circular gate conductor 7 and the second circular gate conductor 8, and is configured so as to equalize the voltage drop due to self-inductance or mutual inductance between the first circular gate conductor 7, second circular gate conductor 8 and cathode post electrode 4. In this manner it is possible to guarantee more or less uniform parallel inductance over the surface of the element.
申请公布号 US6166402(A) 申请公布日期 2000.12.26
申请号 US19990335702 申请日期 1999.06.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KODANI, KAZUYA;MATSUMOTO, TOSHIAKI;TOBITA, MASAYUKI
分类号 H01L29/744;H01L21/52;H01L23/48;H01L29/74;(IPC1-7):H01L29/74;H01L31/111 主分类号 H01L29/744
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