发明名称 |
Pressure-contact type semiconductor element and power converter thereof |
摘要 |
A double circular gate conductor 9 comprises a first circular gate conductor 7 connected to a gate electrode 2a, a second circular gate conductor 8, and a connecting conductor which connects the first circular gate conductor 7 and the second circular gate conductor 8, and is configured so as to equalize the voltage drop due to self-inductance or mutual inductance between the first circular gate conductor 7, second circular gate conductor 8 and cathode post electrode 4. In this manner it is possible to guarantee more or less uniform parallel inductance over the surface of the element.
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申请公布号 |
US6166402(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19990335702 |
申请日期 |
1999.06.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KODANI, KAZUYA;MATSUMOTO, TOSHIAKI;TOBITA, MASAYUKI |
分类号 |
H01L29/744;H01L21/52;H01L23/48;H01L29/74;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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