发明名称 |
Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation |
摘要 |
An integrated circuit is formed that contains a ferroelectric element comprising metal oxide material containing at least two metals. An oxygen-recovery anneal is conducted in ambient oxygen at a temperature range from 300 DEG to 1000 DEG C. for a time period from 20 minutes to 2 hours. The oxygen-recovery anneal reverses the effects of hydrogen degradation and restores ferroelectric properties. The oxygen-recovery anneal is more effective as the annealing temperature and annealing time increase. Preferably the metal oxide element comprises a layered superlattice compound. Hydrogen degradation of the ferroelectric properties is minimized when the layered superlattice compound comprises strontium bismuth tantalum niobate and the niobium/tantalum mole ratio in the precursor is about 0.4. Hydrogen degradation is further minimized when at least one of the superlattice generator-element and the B-site element of the layered superlattice compound is present in excess of the amounts represented by the balanced stoichiometric formula of the compound.
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申请公布号 |
US6165802(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19980062258 |
申请日期 |
1998.04.17 |
申请人 |
SYMETRIX CORPORATION;NEC CORPORATION |
发明人 |
CUCHIARO, JOSEPH D.;FURUYA, AKIRA;PAZ DE ARAUJO, CARLOS A.;MIYASAKA, YOICHI |
分类号 |
H01L21/8247;H01L21/30;H01L21/314;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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