| 摘要 |
PURPOSE: To provide a semiconductor memory provided with a detecting circuit which can obtain a result by processing for a short time, and which can detect at high speed not only that all verified read-out results are valid or not, but the number of fail. CONSTITUTION: In order to detect whether memory cells MC0-MC1 hold the prescribed data or not, the prescribed current Ifail1 is made to flow based on write-in of each memory cell in batch processing unit and finished/unfinished state of erasure operation, and the number of the prescribed unfinished states is detected by detecting whole current quantity in batch processing unit by A/D converter operation.
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