| 摘要 |
<p>PURPOSE:To epitaxially grow a mixture crystal semiconductor of Group III-V on an Si substrate without mis-fit dislocation by keeping the lattice distortion of a plurality of semiconductor layers constituting a semiconductor element within an amount of critical distortion which generates mis-fit dislocation. CONSTITUTION:For an active layer 10 is used a stress distortion type superlattice layer in which a band gap can be freely set up in the range of 2 to 0eV. In that case, the lattice distortion of each semiconductor layer constituting a photo-semiconductor element is kept within an amount of critical distortion by which mis-fit dislocation is generated in the whole temperature region of production process. Also, in the case where the growth of the total film layer of a distortion layer exceeds the critical film thickness, a layer having tensile distortion is laminated on a layer having compression distortion or a layer having compression distortion is laminated on a layer having tensile distortion to compensate for a stress. Thereby, the film thickness of a semiconductor element can be kept within the critical film thickness by which mis-fit dislocation is not generated.</p> |
