CIRCUIT FOR GENERATING INTERNAL VOLTAGE

摘要

PURPOSE: A circuit for generating an internal voltage is provided to control accurately a level of the internal voltage when an overshooting phenomenon is generated from the internal voltage. CONSTITUTION: A discharge current circuit(30) including the first and the second NMOS transistors(N4,N5) and a variable resistance(R1) is installed between a node(B) and ground voltage. The first NMOS transistor(N4) of the discharge current circuit(30) includes a drain connected with the node(B) and a gate. The second NMOS transistor(N5) includes a drain connected with the node(B), a source connected with the ground voltage, and a gate connected with a source of the first NMOS transistor(N4). The variable resistance(R1) is connected between the gate of the second NMOS transistor(N5) and the ground voltage.