发明名称 |
High-reliability shift register circuit |
摘要 |
The main circuit of each stage of the high-reliability shift register circuit is composed of transistors, and the turn-on time for the four transistors are only 1~2 pulse time within one frame time. Transistors construct an inverter circuit which continuously offers a high-level supply voltage that controls activities of transistors so as to continuously offer a low-level supply voltage to the first node and the output terminal such that avoids the first node and the output terminal being in a floating state. Besides, one of the transistor acts as a charging circuit that extends the lifetime of another transistor. This circuit avoids the affection on the behavior of the shift register circuit that is caused by an a-Si (amorphous silicon) TFT under a sustained stress.
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申请公布号 |
US6970530(B1) |
申请公布日期 |
2005.11.29 |
申请号 |
US20040923862 |
申请日期 |
2004.08.24 |
申请人 |
WINTEK CORPORATION |
发明人 |
WANG WEN-CHUN;LIAO WEN-TUI;TSAI JA-FU |
分类号 |
G11C19/00;G11C19/28;(IPC1-7):G11C19/00 |
主分类号 |
G11C19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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