| 摘要 |
<p>A method for manufacturing a multilayer epitaxial silicon single crystal wafer is provided. In the method, at least a silicon single crystal bar doped with nitrogen is grown by Czochralski method, the silicon single crystal bar is sliced and processed into a silicon single crystal wafer, then, on a surface layer of the silicon single crystal wafer, an epitaxial layer of a first layer is formed, then, at least an epitaxial layer of a second layer is formed on a surface layer of the epitaxial layer of the first layer. Thus, the method for manufacturing multilayer epitaxial silicon single crystal wafer, which does not cause slip dislocation and is applicable even to a high resistivity wafer and a wafer having a diameter of 300mm or more, and a multilayer epitaxial silicon single crystal wafer are provided.</p> |
