| 摘要 |
A method for fabricating an MIM(Metal-Insulator-Metal) capacitor is provided to minimize particles generated on a substrate by performing a post-cleaning process with a chemical having a 50:1 mixture ratio of sulphuric acid and hydrogen peroxide. A silicon substrate(10) having an underlying layer(20) is prepared. The underlying layer includes a plug(30) for a capacitor. An oxide layer(40) is thickly deposited on the underlying layer including the plug. A portion of the oxide layer is partially etched to form a hole for exposing the plug and defining a capacitor lower electrode region to be formed subsequently. A metal layer(60) for a lower electrode is deposited on a surface of the hole and the oxide layer and then a photoresist(70) is applied to gap-fill the hole. A post-cleaning process for removing particles on the silicon substrate is performed on the resultant structure using a chemical having a 50:1 mixture ratio of sulphuric acid and hydrogen peroxide.
|
