| 摘要 |
Disclosed is a layer arrangement ( 4 b, 5 b, 9 b, 10, 9 a, 5 a, 4 a) within an insulating trench, which insulates circuits with little distortion while being suitable for electrically insulating high-voltage power components ( 7 ) relative to low-voltage logic elements ( 6 ) that are integrated on the same chip ( 1, 2, 3 ). Also disclosed is the production of a sequence of alternating vertical layers in a trench (T). The electric strength for high voltages is improved while the influence of defects created by distortions of substrate disks is prevented.
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