Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer

摘要

A susceptor ( 10 ) supporting a semiconductor substrate (W) in a vapor phase growth, wherein a pocket ( 11 ) is formed on an upper surface of the susceptor to arrange the semiconductor substrate (W) inside thereof. The pocket ( 11 ) has a two-stage structure having an upper stage pocket ( 11 a) for supporting an outer peripheral edge portion of the semiconductor substrate (W) and a lower stage pocket ( 11 b) formed on a lower stage of a center side from the upper stage pocket ( 11 a). A hole ( 12 ) penetrated to a rear surface of the susceptor and opened in the vapor phase growth is formed in the lower stage pocket ( 11 b).