METHOD OF CORRECTING A DESIGN PATTERN OF A MASK

摘要

A method for correcting the design pattern of a mask is provided to minimize a region on which an OPC(optical proxity correction) process is to be performed, by making a real pattern or a simulation pattern have a round shape smaller in size than a design pattern. A first design pattern of a mask for forming a first real pattern is formed on a substrate(S110). The information of a second real pattern is obtained which overlays the first real pattern(S120). An OPC process is performed on the first design pattern by using the information(S130). An overlay margin between the second real pattern and the corrected first design pattern is obtained. An OPC process is selectively performed on the first design pattern according to the overlay margin.