| 摘要 |
PROBLEM TO BE SOLVED: To provide a crucible for growing a single crystal, which satisfies both of control of crystal face orientation and prevention of polycrystallization caused by the generation of a grain boundary; and to provide a high quality fluoride crystal grown by using the crucible. SOLUTION: When a fluoride raw material melted in a raw material housing part 2B of a crucible main body 2 is crystallized by cooling, heat is sufficiently dissipated through a heat dissipating space 5 around the small diameter peripheral wall part 2C of the crucible body 2 and a plurality of heat dissipating windows 6C of a cylindrical supporting member 6, in the small diameter peripheral wall part 2C side of the crucible body 2. Resultingly, the temperature gradient of the crucible body 2 is maintained in such a temperature gradient that the temperature in the small diameter peripheral wall part 2C side surrounding a seed crystal housing part 2D housing a seed crystal is low and the temperature in the large diameter peripheral wall part 2A side surrounding the raw material housing part 2B housing the fluoride raw material is high. Thereby, when the fluoride raw material melted in the raw material housing part 2B is crystallized, crystal growth is started from the seed crystal housed in the seed crystal housing part 2D as a starting point and proceeds radially from the seed crystal as a center along the crystal surface of the seed crystal. COPYRIGHT: (C)2008,JPO&INPIT
|
