| 摘要 |
<p>An apparatus and a method for exposing a wafer are provided to suppress topology issue in a wafer and to improve uniformity of a pattern critical dimension by comparing a simulated measurement value and a reference value in the exposing apparatus. A reference exposure condition applied according to the exposure field on a wafer is set(201). Mask layout data used when transferring a pattern on the wafer is obtained(203). The pattern transfer simulation of the mask layout data and the reference exposure conditions is performed(205). The mask error enhancement factor is measured(207). The exposure conditions are changed according to exposure conditions to compensate for the difference between the measured mask error enhancement factor and the reference mask error enhancement factor(209,211). The wafer exposure according to the exposure field is performed under the changed set exposure condition(213).</p> |
