发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress irregularity of an under surface of a wafer.SOLUTION: A semiconductor device manufacturing method includes: a process of forming a stopper 20 on a top face 11 of a wafer 10; a process of forming a protection material 30 on the top face of the wafer so as to cover bump electrodes 18 and the stopper formed on the top face of the wafer; a process of planarizing a top face of the protection material in a manner such that planarization is stopped by the stopper; and a process of grinding an under surface of the wafer with reference to the planarized top face of the protection material.SELECTED DRAWING: Figure 2
申请公布号 JP2016092343(A) 申请公布日期 2016.05.23
申请号 JP20140228611 申请日期 2014.11.11
申请人 FUJITSU LTD 发明人 KIKUCHI RYO;IMAIZUMI NOBUHIRO
分类号 H01L21/304;B24B7/22;B24B37/013 主分类号 H01L21/304
代理机构 代理人
主权项
地址