发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To suppress irregularity of an under surface of a wafer.SOLUTION: A semiconductor device manufacturing method includes: a process of forming a stopper 20 on a top face 11 of a wafer 10; a process of forming a protection material 30 on the top face of the wafer so as to cover bump electrodes 18 and the stopper formed on the top face of the wafer; a process of planarizing a top face of the protection material in a manner such that planarization is stopped by the stopper; and a process of grinding an under surface of the wafer with reference to the planarized top face of the protection material.SELECTED DRAWING: Figure 2 |
申请公布号 |
JP2016092343(A) |
申请公布日期 |
2016.05.23 |
申请号 |
JP20140228611 |
申请日期 |
2014.11.11 |
申请人 |
FUJITSU LTD |
发明人 |
KIKUCHI RYO;IMAIZUMI NOBUHIRO |
分类号 |
H01L21/304;B24B7/22;B24B37/013 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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