Real-space charge-transfer device and method thereof

摘要

A real-space charge-transfer device is disclosed. In particular, a Gunn diode is disclosed having a conductive structure fabricated overlying its active region. A secondary signal, other than the normal Gunn diode signal, is generated by the Gunn diode based upon a characteristic of the overlying conductive structure. For example, when the conductive structure is a grate having N teeth the secondary signal will have N secondary oscillation cycles that occur during the duration of a single normal Gunn diode oscillation cycle.

主权项

1. A device comprising:
a real-space charge-transfer device comprising a first anode/cathode terminal spaced apart by a first instance from a second anode/cathode terminal; a semiconductor region coupled to the first and second anode/cathode, wherein current is to flow between the first anode/cathode terminal and the second anode/cathode terminal through the semiconductor region; and a conductive structure overlying the semiconductor region, the conductive structure being spaced apart from the semiconductor region by less than 2500 Angstroms and having a conductivity that is greater than the conductivity of the semiconductor region; and a filter comprising an input coupled to the second anode/cathode terminal, and an output, the filter configured to selectively pass a frequency component provided by the real-space charge-transfer device during operation that is based upon a characteristic of the conductive structure.