发明名称 |
METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL |
摘要 |
A method for manufacturing a silicon single crystal according to a Czochralski method to manufacture an N-type silicon single crystal, including the steps of: seeding to bring a seed crystal into contact with a silicon melt in a crucible and thereafter, necking to pull the seed crystal to narrow a diameter thereof, wherein a dopant concentration in the silicon melt is predicted by a difference between a temperature at the seeding and a temperature at the necking, and resistivity of the single crystal to be pulled is controlled on the basis of the predicted dopant concentration in the silicon melt. A method for manufacturing a silicon single crystal can efficiently manufacture a silicon single crystal with a desired resistivity. |
申请公布号 |
US2016237589(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201415027414 |
申请日期 |
2014.10.16 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
SOETA Satoshi;NAKANO Shinji;IKEDA Kouichi |
分类号 |
C30B15/20;C30B30/04;C30B29/06;C30B15/04;C30B15/14 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Tokyo JP |