发明名称 |
HIGH-FREQUENCY SEMICONDUCTOR MODULE |
摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor module capable of enhancing its performance.SOLUTION: A high-frequency semiconductor module according to an embodiment comprises: a cooling body; a high-frequency semiconductor device that has on its surface a high-frequency circuit including a signal processing circuit arranged on the cooling body and configured to perform signal processing to a high-frequency signal; a thermal insulation container that accommodates the cooling body and the high-frequency semiconductor device therein; and a plurality of shielding bodies provided between the high-frequency semiconductor device including the high-frequency circuit and an inner surface of the thermal insulation container. The plurality of shielding bodies electromagnetically-spatially separate a space on the high-frequency circuit and its peripheral space from each other, and are provided so as to electromagnetically-spatially separate the space on the high-frequency circuit into a plurality of spaces.SELECTED DRAWING: Figure 8 |
申请公布号 |
JP2016163105(A) |
申请公布日期 |
2016.09.05 |
申请号 |
JP20150037961 |
申请日期 |
2015.02.27 |
申请人 |
TOSHIBA CORP |
发明人 |
TAZAWA TORU;TOMABECHI JUNJI;SUENAGA KOICHI |
分类号 |
H04B1/18;H01L23/00;H01L23/02;H01L23/12;H01L23/473;H05K9/00 |
主分类号 |
H04B1/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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