| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a lighting device having a higher efficiency and a larger optical output.SOLUTION: A semiconductor light-emitting element 100 has such a structure that at least a first semiconductor layer 30, a light-emitting semiconductor layer 40 and a second semiconductor layer 50 are laminated on an optical base material 10 where a fine uneven structure 20 is formed on one principal surface partially or entirely, and a reflective layer 90 is provided on the other principal surface on the opposite side of one principal surface. Average pitch of the fine uneven structure 20 is 200-1500 nm, a ratio M=W1×W2/(2T(W1+W2)) determined by the width W1 in the longitudinal direction and the width W2 in the traverse direction and the depth T of the optical base material 10 is 1 or more, and the reflectance of the reflective layer 90 is 80% or more.SELECTED DRAWING: Figure 1 |
