| 摘要 |
1,181,986. Contacting semi-conductor devices- TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 19 July, 1967 [30 Aug., 1966], No. 33214/67. Heading H1K. A semi-conductor body 1 of silicon has an epitaxial layer 2 of silicon deposited thereon and is covered with a layer 4 of silicon dioxide or nitride. A P-type region 3 is formed by diffusion and a layer of nickel 6 vapour deposited, followed by a vapour deposited layer 7 of silver. A silver boss 8 is galvanically added. The diode may be mounted between iron-nickel cores joined to copper-sheathed wires and sealed in a glass tube. The silicon body may be of the opposite polarity. |
