| 摘要 |
A film of Si3 N4 is deposited on to a substrate, particularly a semiconductor such as Si, by generating an r.f. discharge e.g. of frequency 13.6 Mc/s between the substrate and a Si source (as cathode) in N2 or a N2 - containing gas or a gas containing a compound yielding N2 preferably N2 + A of pressure between 0.5 and 20 microns Hg, whereby Si is sputtered from the source and reacts with the N2 to form the film. Preferably the substrate is maintained at a temperature of at least 300 DEG C, and a magnetic field having lines of force perpendicular to the planes of the substrate and source is generated to confine the plasma. |
