Halbleiterbauelement mit einer aus einem Substrat,einer Maske mit mindestens einem Fenster und aus einer durch die Fenster auf das Substrat aufgewachsenen einkristallinen Halbleiterschicht bestehenden Grundstruktur und Verfahren zu seiner Herstellung

摘要

1,186,945. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 12 March, 1968 [15 March, 1967], No. 11872/68. Heading H1K. A semi-conductor device comprises a monocrystalline substrate 21 having a mask 22 on one surface and an epitaxial layer 23 of semiconductor material grown through a window in the mask to extend over part of the surface of the mask. This extension is produced by arranging that the direction of highest growth rate of the semi-conductor material is parallel to the surface of the substrate. The mask is made of silicon dioxide and a Group IV element or Group III-V compound such as gallium arsenide is used as the semi-conductor material. In the case of a diode, an impurity is diffused into a part 24 of the grown epitaxial layer 24 to form a PN junction in this layer, and electrodes 25, 26 are provided. Embodiments in the form of thyristors, Fig. 2 (not shown), and field effect transistors, Fig. 1 (not shown), are also described.