| 摘要 |
1,208,077. Semi-conductor devices. SPERRY RAND CORP. 11 April, 1968 [19 May, 1967], No. 17494/68. Heading H1K. An insulating layer 2 on the surface of a semi-conductor device comprises a bottom layer 6 of silicon oxide at least 100Š thick and a top layer 5 of silicon nitride or silicon oxynitride, the total thickness of the layer 2 being no greater than 1500Š. The embodiment shown comprises an MIS capacitor formed on an N-type Si body 3. The oxide layer 6 is formed by oxidation in pure O 2 or in argon containing 1% N 2 O. The top layer 5 may be deposited as disclosed in Specifications 1,125,650 or 1,130,138. The invention may also be applied to an IGFET, in which the combined oxide nitride layer is used firstly as a diffusion mask to define source and drain regions, and then as gate insulation and junction edge passivation. Reference has been directed by the Comptroller to Specification 1,165,009. |
