发明名称 |
METHOD OF PRECIPITATING LAYERS OF SEMICONDUCTING OR INSULATING MATERIAL FROM A FLOWING REACTION GAS OR FROM A FLOWING DOPANT GAS UPON HEATED SEMICONDUCTOR CRYSTALS |
摘要 |
Method of precipitating layers of semiconducting or insulating material from a flowing reaction gas, upon heated semiconductor crystals, or for doping such crystals from a flowing dopant gas, wherein totally constant or only gradually changing operational conditions are maintained. The method is characterized by the fact that all working phases are so carried out with constant operational conditions. During one-half of the time required therefor, the reaction gas is transported approximately tangentially from one side over the semiconductor crystals to be processed. During the other half of the required period the reaction gas is transported approximately tangentially from the opposite side over the semiconductor crystals to be processed.
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申请公布号 |
US3658585(A) |
申请公布日期 |
1972.04.25 |
申请号 |
USD3658585 |
申请日期 |
1970.02.26 |
申请人 |
SIEMENS AG. |
发明人 |
EDUARD FOLKMANN;ERICH PAMMER |
分类号 |
C30B25/02;C23C16/44;C23C16/455;C30B25/14;C30B31/16;H01L21/00;H01L21/205;H01L21/22;H01L21/31;(IPC1-7):C01B33/02 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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