发明名称 |
PLANAR RANDOM ACCESS FERROELECTRIC COMPUTER MEMORY |
摘要 |
This memory device uses ferroelectric materials and it stores information as a change in the crystalline formation of the ferroelectric material. In turn, this change manifests itself as a change in the light intensity of polarized light incident upon the ferroelectric bits.
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申请公布号 |
US3675220(A) |
申请公布日期 |
1972.07.04 |
申请号 |
USD3675220 |
申请日期 |
1970.11.30 |
申请人 |
ADVANCED PATENT TECHNOLOGY INC. |
发明人 |
ALVIN A. SNAPER;GEORGE D. GREGORY;MILES R. MUNROE |
分类号 |
G11C11/22;G11C13/04;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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