发明名称 INFORMATION WRITING CIRCUIT FOR MEMORY DEVICE
摘要 In a three-dimensional current coincident mode memory plane, inhibit lines, common-inhibit-sense lines and/or sense lines are divided into a plurality of pairs of wirings so as to be selectively driven through an address decode matrix by drivers and gate switches.
申请公布号 US3696348(A) 申请公布日期 1972.10.03
申请号 USD3696348 申请日期 1970.04.20
申请人 E.R.D. CORP. 发明人 TATSUO KOBAYASHI
分类号 G11C11/06;(IPC1-7):G11C5/08;G11C7/02 主分类号 G11C11/06
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