| 摘要 |
PURPOSE:To increase resistance between bases, and to augment the hFE of two transistors by enlarging the N<+> diffusion layers of the surfaces of the boundary P layers of the transistors. CONSTITUTION:The transistors are formed by the N<-> layer 1 of a Si semiconductor substrate bevel-cut, a substrate back N<+> layer 4, to which the collectors of the transistors Q1, Q2 are fitted, surface P layers 2a, 2b functioning as the bases, the boundary section P layer 2c, an N<-> layer 3 isolation the P layer into the bases of the transistors Q1, Q2, N<+> diffusion layers, 5a, 5b serving as emitters, and an N<+> diffusion layer 5c shaped to the P layer 2c. The layer 2c is divided into P layers 2c1, 2c2 with thin width by the layer 5c. When the layer 5c is formed in an large area, resistance between the bases of the transistors Q1, Q2 can be increased. |
