| 摘要 |
PURPOSE:To obtain a P-I-N type thin film solar battery wherein the forbidden band width of an I-layer is in the neighborhood of 1.4eV and that of a window layer is made as large as possible by changing the I-layer into an amorphous film with Si and Ge as the main constituent and the window layer into an amorphous film with Si and Ci as the main constituent. CONSTITUTION:An ITO film 2 is formed on a glass substrate 1 by vapor deposition, and amorphous films are formed thereon in the order of a P-layer 3, an I- layer 4, and an N-layer 5. The P-layer 3 is formed by the glow discharge decomposition of the mixed gas with an Si hydrogen compound such as SiH4 or an Si fluoride, hydrocarbon such as CH4, B2H6, etc., and the I-layer 4 by the mixed gas with an Si compound such as SiH4 and a Ge compound, respectively. The N- layer 5 can be formed by the mixed gas with SiH4 and PH3 in the same manner as a conventional solar battery. A photovoltage generated by the incidence of a light 7 can be led out from connection conductors 8 and 9 by providing a metallic electrode 6 on the N-layer 5. The forbidden band width of the P-layer 3 with Si and C as the main constituent increase as C-content increases. |
