| 摘要 |
PURPOSE:To obtain the compound semiconductor device equipped with a thermally stable ohmic electrode having excellent bondability by a method wherein said compound semiconductor device is composed of the first laminated layer consisting of gold and germanium-platinum and the second laminated layer consisting of titanium-aluminum. CONSTITUTION:A laminated layer 4 of gold germanium 2-platinum 3 is provided on an N type GaAs substrate 1. A silicon dioxide film 8 and a photoresist film 9 are coated on the above, an aperture part 10 is provided, and titanium 5 and aluminum 6 are successively vapordeposited thereon. The photoresist film 9 is removed and an ohmic electrode 11 is obtained. As there is titanium 5'' covering the circumferential part of the gold.germanium-platinum laminated layer 4, the direct contact of aluminum 6'' and platinum 3 can be blocked, thereby enabling to prevent the generation of alloying reaction of the aluminum 6 and the platinum 3. |
