| 摘要 |
PURPOSE:To protect the end parts of a PSG film from being etched in the process after the PSG film is formed by covering a film such as the PSG film which has high etching speed with a film which has low etching speed. CONSTITUTION:In a passivation process, at first a hot oxide SiO2 film 1 and a PSG film 2 are successively formed on the surface of a semiconductor substrate 6 and a predetermined part is etched for 1st window opening W1 for an electrode. If steps are formed between the hot oxide SiO2 film 1 and the PSG film 2 as shown in the figure at that time and a CVD-SiO2 film 3 is formed to cover the surface, the PSG film 2 is perfectly covered with the CVD-SiO2 film 3 at the stepped parts. Then, if 2nd window opening W2 for an electrode is performed at the part where the end parts of the PSG film 2 are not exposed, in the process of forming a passivation film, a film which has high etching speed such as the PSG film can be protected including its end parts with a film which has low etching speed such as the CVD-SiO2 film 3.
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