发明名称 PROCESSING APPARATUS
摘要 PURPOSE:To make processing conditions of objects to be processed uniform especially in a processing chamber heated to a high tempertaure by connecting a preheating means for introduced gas to the processing chamber. CONSTITUTION:An oxygen gas feeder 10 in which a preheater 12 for preheating the oxygen gas 8 is provided and an oxygen gas source 11 are connected to a gas inlet 9 through which the oxygen gas 8 is introduced into a processing tube 1. With this constitution, the oxygen gas 8 whose temperature is elevated can be diffused uniformly in the whole processing tube 1 without settling in the lower part of the processing tube 1 even at the initial stage of the oxygen gas 8 introduction. Therefore, the distribution of the oxygen gas 8 and the distribution of the temperature in the processing tube 1 can be made to be uniform vertically so that the forming process of oxide films performed by the oxygen and temperature can be uniformly carried out and, as a result, film thickness distribution of the wafers 4 can be uniform.
申请公布号 JPS62249423(A) 申请公布日期 1987.10.30
申请号 JP19860092010 申请日期 1986.04.23
申请人 HITACHI LTD 发明人 OSONO SHIGEJI
分类号 H01L21/205;H01L21/31 主分类号 H01L21/205
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