| 摘要 |
PURPOSE:To form an element having excellent characteristics in a complementary type element forming region without disordered shape of a pattern by shaping a trench to the surface of a single crystal substrate and forming the complementary type element forming region onto the trench through an insulating film. CONSTITUTION:The surface of one conductivity type semiconductor substrate 1 is mesa-etched, the surfaces of the first and second surfaces partitioned by a mesa section are exposed, and a reverse conductivity type buried layer 2 is formed to the second surface. First and second trenches are shaped, the surface of the substrate 1 is coated with an insulating film 3, windows are bored to the first surface and onto the buried layer 2, and a polycrystalline semiconductor layer 4 is shaped. The polycrystalline semiconductor layers 4 isolated by the mesa section are formed through polishing working, the surface is coated with an insulating film 6, the polycrystalline semiconductor layers 4 are changed into a single crystal through heat treatment, and one conductivity type and reverse conductivity type single crystal semiconductor devices 5a, 5b are shaped. Etching is conducted up to the lower section of the buried layer 2, and each insulated and isolated one conductivity type and reverse conductivity type element forming regions 7a, 7b are formed.
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