| 摘要 |
PURPOSE:To acquire a good semiconductor device which is highly moisture resistant at a bonding pad section by forming an anti-corrosive metal thin film on an exposed bonding pad section and an insulation film thereabout. CONSTITUTION:After forming an electrode wiring 3, a plasma nitride film 4 is formed, and a CVD oxide film 5 is formed thereon. Then an opening is shaped in a bonding pad section 3 to deposit gold. Etching by ultrasonic wave, gold 6 is left at the bonding pad section alone. That is, water is prevented from penetrating and corroding the pad section 3 by covering the bonding pad section 3 with the gold 6. Water penetration into a semiconductor device itself can be also prevented by forming the CVD oxide film 5 and the plasma nitride film 4 on a cover film. According to this constitution, water penetration can be entirely prevented, thus improving moisture resistance and manufacturing a highly reliable semiconductor device. |
