| 摘要 |
PURPOSE:To enable to operate as a non volatile RAM, and moreover to contrive to reduce the consuming current of a semiconductor memory unit by a method wherein ferroelectric substance films are formed on polycrystalline Si films to be used as load resistors interposing insulators between them. CONSTITUTION:Besides connection is performed as in the past between transistors 7, 8, 9, 10 and load resistors 11, 12, the ferroelectric substance films 13, 14 are formed on the load resistors 11, 12 interposing the insulating films between them, and polarities of the ferroelectric substances are inverted respectively by reverse electric potential of electrodes 15, 16. Accordingly the resistance value on one side of the polycrystalline Si resistors 11, 12 is increased to cut off almost the current, and the resistance value on another side is reduced. At structure mentioned above, because polarity of the ferroelectric substance has non volatility, operation as the non volatile RAM is enabled, and when the FET7 is made to ON, because the resistance value of the load resistor 11 is increased, the consuming current is reduced. |
