发明名称 Vertical optoelectronic semiconductor device
摘要 An active layer having a predetermined effective band gap, a predetermined effective refractive index, and a predetermined thickness is sandwiched between a first clad layer and a second clad layer. Each of the clad layers has an effective band gap wider than that of the active layer, an effective refractive index lower than that of the active layer, and a predetermined thickness. On the first clad layer, there is disposed a first stack structure doped to a first conductivity type, which alternately includes a layer of a high refractive index and a layer of a low refractive index, and has a discontinuity of a band of the first conductivity type made quite smaller than that of a band of a second conduction type. On the second clad layer, there is disposed a second stack structure doped to the second conductivity type, which alternately includes a layer of a high refractive index and a layer of a low refractive index, and has a discontinuity of a band of the second conductivity type made quite smaller than that of the band of the first conductivity type. Each of the first and second stack structures serves as an optical filter and also forms a low-resistance conduction path.
申请公布号 US5392307(A) 申请公布日期 1995.02.21
申请号 US19930113829 申请日期 1993.08.31
申请人 FUJITSU LIMITED 发明人 SUGIYAMA, YOSHIHIRO;NAKATA, YOSHIAKI
分类号 H01S5/00;H01S5/18;H01S5/183;(IPC1-7):H01S3/19 主分类号 H01S5/00
代理机构 代理人
主权项
地址