| 摘要 |
The present invention provides an Si base semiconductor monocrystal substrate which includes an Si(11n) substrate where n=1.5-2.5. An intermediate layer is formed on the Si(11n) substrate. The intermediate layer is made of a material selected from the group consisting of ZnTe and Zn-rich CdZnTe, The intermediate layer has a thickness in the range of 50-200 angstroms. The intermediate layer is oriented in a (11n')B plane. An upper layer is formed on the intermediate layer. The upper layer is made of a material selected from the group consisting of CdTe and Cd-rich CdZnTe. The upper layer is oriented in a (11n'')B plane. The indexes n' and n'' satisfy the following equations. <IMAGE> where y is the lattice mismatch between the Si substrate and the intermediate layer. <IMAGE> where y' is the lattice mismatch between the Si substrate and the upper layer.
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