| 摘要 |
PROBLEM TO BE SOLVED: To provide a self-excited sinusoidal-wave push-pull circuit which suppresses each gate bias voltage within an appropriate range performing follow-up faithfully, even if characteristics of field-effect transistors differ a little because of manufacturing conditions, a temperature, and so on. SOLUTION: A self-excited sinusoidal-wave push-pull circuit using field-effect transistors FET1, FET2 is provided with a gate bias circuit which applies a constant gate bias voltage to each field-effect transistor FET1, FET2, resistors R3, R4 provided in the middle of a circuit concerted from the above-mentioned gate bias circuit to the gate of each field-effect transistor FET1, FET2, and a diode D1 or D2 connected from the gate of one field-effect transistor FET1 or FET2 to the drain of the other field-effect transistor FET2 to FET1, and holds the gate bias voltage of a field-effect transistor in the course of operation at an appropriate value near a threshold value. |
