| 摘要 |
<p>PURPOSE:To provide a phase shift mask with which a wide production allowance is taken. CONSTITUTION:The shifter material of auxiliary patterns 2 of the phase shift mask including main patterns 1 and the auxiliary patterns 2 is formed as a material having controlled light transmittance. The light peak intensity in the sufficient main patterns and secondary light peak intensity of the regulated value or below are obtd. by the auxiliary patterns 2 of a large width, by which the resolution of pattern forming regions is improved. The large production allowance of the mask is taken by adopting the auxiliary patterns 2 of the large width. The production stages for semi-light shielding films are omitted if this phase shift mask is applied to a halftone phase shift mask.</p> |
