Epitaxial wafer and light emitting diode

摘要

There is disclosed an epitaxial wafer comprising epitaxial layers 3-6 formed on a main surface of a compound semiconductor single crystal substrate 2, characterized in that the epitaxial layer 3a on the main surface is exposed in a back surface of the compound semiconductor single crystal substrate 2, and an exposed portion 8 of the epitaxial layer 3a has a carrier concentration of 1 x 10<17> cm<-3> to 2 x 10<18> cm<-3>. The present invention provides an ultra thin type light emitting diode where generation of ohmic electrode failure was suppressed, and an epitaxial wafer for the light emitting diode.