| 摘要 |
PROBLEM TO BE SOLVED: To obtain a thin film of a complex of a silicon-containing metal complex oxide with an aliphatic organic polymer excellent in mechanical strengths, adhesion performance with substrates, crack resistance, uniformity of film thickness and thick film-forming performance. SOLUTION: A thin film of an aliphatic organic polymer-inorganic complex is obtained by applying and gelling a composition comprising an alkoxysilane, at least one metal compound of a metal other than silicon selected from the forth, the fifth, the sixth, the thirteenth and the sixteenth families and an aliphatic organic polymer. Further, a porous silicon-containing metal complex oxide thin film is obtained by removing the aliphatic organic polymer from the thin film. The porous silicon-containing metal complex oxide can be preferably used as an insulating film for multilayer wiring as it is more excellent in mechanical strengths, adhesiveness to substrates, uniformity of film thickness and thick film-forming performance than usual ones and is capable of imparting low dielectric constants.
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