发明名称 |
Method for production of SOI substrate by pasting and SOI substrate |
摘要 |
This invention solves the problem of a pasted SOI substrate generating voids in the peripheral part thereof and consequently decreasing the number of devices to be derived therefrom. It concerns a method for the production of a SOI substrate obtained by pasting a first Si substrate possessing a SiO2 surface and a second substrate possessing a Si surface on the SiO2 surface and the Si surface, which method comprises washing the Si surface of the second Si substrate, thereby imparting hydrophobicity to the Si surface before the first Si substrate and the second Si substrate are pasted together.
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申请公布号 |
US6156624(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19970832859 |
申请日期 |
1997.04.04 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YAMAGATA, KENJI;YONEHARA, TAKAO;ATOJI, TADASHI;SAKAGUCHI, KIYOFUMI |
分类号 |
H01L21/02;H01L21/20;H01L21/336;H01L21/762;H01L27/12;H01L29/786;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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