| 摘要 |
PURPOSE: A method of making a thin film transistor substrate is provided to prevent a cavity made around a drain electrode by forming a photoresist film pattern or an organic insulating film pattern the thickness of which is partially different. CONSTITUTION: The method of making a thin film transistor substrate comprises sequentially forming a gate insulating film(30), a semiconductor layer(40) and a data metal layer on a gate wire. A data wire, which is comprised of source and drain electrodes(65,66,75,76) and data pads(64,74), is formed by patterning the data metal layer. A passivation film(80) is formed on the data wire. A gate insulating film pattern having the first contact hole for exposing the gate pads(14,24) is formed by patterning the semiconductor layer(40) and the gate insulating film(30) together with the passivation film. A semiconductor layer pattern is formed which has the first opening for exposing the gate insulating film between the data wires. A passivation film pattern is formed which has the second contact hole for exposing the data pads(64,74) and the second opening for exposing the gate insulating film, exposed through the first opening, with the drain electrode. A pixel electrode is formed on the gate insulating film so as to be connected to the drain electrode.
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