| 摘要 |
PURPOSE: A method for making a contact wiring layer of a semiconductor device is provided to form a reliable wiring layer by using a copper as a wiring material. CONSTITUTION: An insulation layer is formed on a lower conductive layer, and a contact hole exposing the lower conductive layer is formed on the insulation layer. A barrier layer(24) is formed on a resultant structure including the contact hole. The barrier layer is annealed in a gas environment including a sulfur atom. A wiring layer is formed by depositing a copper(26) to fill the contact hole. The barrier layer is made of Ta, TaNx, W or WNx. The gas including a sulfur is H2S or H2S2. Thereby, a contact wiring layer of a semiconductor device forms a reliable wiring layer by using a copper as a wiring material.
|
