| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device and its manufactur ing method which can solve the problems of exposure irregularity, deterioration of wettability of solder, etc., in the case of forming a mask layer for forming stripes, without generating a new problem due to difference of height of the laminate constituting each element, in a semiconductor light emitting device having plural semiconductor light emitting elements. SOLUTION: A first laminate ST1 is formed in a first semiconductor light emitting element forming region on a substrate SUB (30). A height adjusting part AD of semiconductor films (50, 51) containing GaAs and a protruding part formed on a GaAs substrate are formed in a second semiconductor light emitting element forming region. A second laminate ST2 is formed on the upper layer of the height adjusting part. Since the height adjusting part AD is formed, the top part height of the first laminate ST1 is practically equal to that of the second laminate ST2. |
