| 摘要 |
PROBLEM TO BE SOLVED: To realize uniform light emission on a light emission observing surface of a group III nitride compound semiconductor light-emitting element. SOLUTION: A plurality of current diffusion paths are formed by dividing a translucent electrodes with insulating parts. Resistance of each of the current diffusion paths is made higher than that of the translucent plane electrode itself prior to division. As a result, currents in the diffusion paths become easy to flow into the semiconductor layer side from the diffusion paths, so that a current will not concentrate in one pole but is distributed uniformly over the whole semiconductor layer. |
