| 摘要 |
An ultraviolet type white color light emitting device (Q) including a 340 nm-400 nm ultraviolet InGaN-LED, a first fluorescence plate of ZnS doped with more than 1x10<17 >cm<-3 >Al, In, Ga, Cl, Br or I for absorbing ultraviolet rays and producing blue light (fluorescence), a second fluorescence plate of ZnSSe or ZnSe doped with more than 1x10<17 >cm<-3 >Al, In, Ga, Cl, Br or I for absorbing the blue light, producing yellow light (fluorescence) and synthesizing white color light by mixing the yellow light with the blue light.A blue light type white color light emitting device (R) including a 410 nm-470 nm blue light InGaN-LED, a fluorescence plate of ZnSxSe1-x (untreated 0.2<=x<=0.6; heat-treated 0.3<=x<=0.67) doped with more than 1x10<17 >cm<-3 >Al, In, Ga, Cl, Br or I for absorbing the blue light, producing 568 nm-580 nm yellow light (fluorescence) and synthesizing white color light by mixing the yellow light with the blue LED light.
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